GB02SHT01-46

Obsolete

GeneSiC Semiconductor

DIODE SIL CARBIDE 100V 4A TO46

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARBIDE 100V 4A TO46

Technical Specifications

Parameters and characteristics for this part

Specification	GB02SHT01-46

Capacitance @ Vr, F	76 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	210 °C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-206AB, TO-46-3 Metal Can
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-46
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

Part	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Technology
GeneSiC Semiconductor GB02SHT01-46	TO-206AB TO-46-3 Metal Can	Through Hole	5 µA	76 pF	TO-46	100 V	4 A	No Recovery Time	210 °C	-55 C	0 ns	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 43.81

General part information

Diode 100 V 4A Through Hole TO-46

Technical documentation and resources