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DIODE SIL CARBIDE 100V 4A TO46
| Part | Package / Case | Mounting Type | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-206AB TO-46-3 Metal Can | Through Hole | 5 µA | 76 pF | TO-46 | 100 V | 4 A | No Recovery Time | 210 °C | -55 C | 0 ns | SiC (Silicon Carbide) Schottky |