BC546B B1G

Obsolete

Taiwan Semiconductor Corporation

TRANS NPN 65V 0.1A TO92

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

TRANS NPN 65V 0.1A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	BC546B B1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type
Taiwan Semiconductor Corporation BC546A B1G	110	100 mA	500 mW	65 V	150 °C	-65 °C	Through Hole	TO-226-3 TO-92-3	15 nA	TO-92	NPN
Taiwan Semiconductor Corporation BC546B B1G	200	100 mA	500 mW	65 V	150 °C	-65 °C	Through Hole	TO-226-3 TO-92-3	15 nA	TO-92	NPN
Taiwan Semiconductor Corporation BC546A A1G	110	100 mA	500 mW	65 V	150 °C	-65 °C	Through Hole	TO-226-3 TO-92-3	15 nA	TO-92	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 65 V 100 mA 500 mW Through Hole TO-92

Technical documentation and resources