BC546A B1G

Obsolete

Taiwan Semiconductor Corporation

TRANS NPN 65V 0.1A TO92

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Obsolete

Taiwan Semiconductor Corporation

TRANS NPN 65V 0.1A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	BC546A B1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type
Taiwan Semiconductor Corporation BC546A B1G	110	100 mA	500 mW	65 V	150 °C	-65 °C	Through Hole	TO-226-3 TO-92-3	15 nA	TO-92	NPN
Taiwan Semiconductor Corporation BC546B B1G	200	100 mA	500 mW	65 V	150 °C	-65 °C	Through Hole	TO-226-3 TO-92-3	15 nA	TO-92	NPN
Taiwan Semiconductor Corporation BC546A A1G	110	100 mA	500 mW	65 V	150 °C	-65 °C	Through Hole	TO-226-3 TO-92-3	15 nA	TO-92	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 65 V 100 mA 500 mW Through Hole TO-92

Technical documentation and resources