TK20A60U(Q,M)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO220SIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK20A60U(Q,M)

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1470 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Supplier Device Package	Mounting Type	Operating Temperature	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK20A60U(Q,M)	TO-220-3 Full Pack	10 V	190 mOhm	1470 pF	600 V	45 W	20 A	30 V	N-Channel	TO-220SIS	Through Hole	150 °C	MOSFET (Metal Oxide)	27 nC
Toshiba Semiconductor and Storage TK20A60W5,S5VX	TO-220-3 Full Pack	10 V	175 mOhm	1800 pF	600 V	45 W	20 A	30 V	N-Channel	TO-220SIS	Through Hole	150 °C	MOSFET (Metal Oxide)		4.5 V	55 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 20A (Ta) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources