TK20A60 Series

Catalog

MOSFET N-CH 600V 20A TO220SIS

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Supplier Device Package	Mounting Type	Operating Temperature	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK20A60U(Q,M)	TO-220-3 Full Pack	10 V	190 mOhm	1470 pF	600 V	45 W	20 A	30 V	N-Channel	TO-220SIS	Through Hole	150 °C	MOSFET (Metal Oxide)	27 nC
Toshiba Semiconductor and Storage TK20A60W5,S5VX	TO-220-3 Full Pack	10 V	175 mOhm	1800 pF	600 V	45 W	20 A	30 V	N-Channel	TO-220SIS	Through Hole	150 °C	MOSFET (Metal Oxide)		4.5 V	55 nC