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70T653MS12BCGI - LATTICE SEMICONDUCTOR LCMXO3L-2100C-5BG256C

70T653MS12BCGI

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Renesas Electronics Corporation

512K X 36 ASYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/OS

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70T653MS12BCGI - LATTICE SEMICONDUCTOR LCMXO3L-2100C-5BG256C

70T653MS12BCGI

Active
Renesas Electronics Corporation

512K X 36 ASYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/OS

Technical Specifications

Parameters and characteristics for this part

Specification70T653MS12BCGI
Access Time12 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization512K x 36
Memory Size18 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case256-LBGA
Supplier Device Package256-CABGA (17x17)
TechnologySRAM - Dual Port, Asynchronous
Voltage - Supply [Max]2.6 V
Voltage - Supply [Min]2.4 V
Write Cycle Time - Word, Page12 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 18$ 364.10
NewarkEach 1$ 373.34

Description

General part information

70T653M Series

The 70T653M is a high-speed 256K x 36 asynchronous dual-port static RAM designed to be used as a stand-alone 18874K-bit dual-port RAM. An automatic power-down feature controlled by the Chip Enables (either CE0 or CE1) permits the on-chip circuitry of each port to enter a very low standby power mode.