70T653M Series

512K x 36 Async, 3.3V/2.5V Dual-Port RAM, Interleaved I/Os

Manufacturer: Renesas Electronics Corporation

Catalog

512K x 36 Async, 3.3V/2.5V Dual-Port RAM, Interleaved I/Os

Part	Access Time	Package / Case	Memory Format	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Memory Size	Write Cycle Time - Word, Page	Memory Type
Renesas Electronics Corporation 70T653MS12BCI8	12 ns	256-LBGA	SRAM	Parallel	85 °C	-40 °C	Surface Mount	SRAM - Dual Port Asynchronous	512K x 36	2.6 V	2.4 V	256-CABGA (17x17)	18 Mbit	12 ns	Volatile
Renesas Electronics Corporation 70T653MS15BC8	15 ns	256-LBGA	SRAM	Parallel	70 °C	0 °C	Surface Mount	SRAM - Dual Port Asynchronous	512K x 36	2.6 V	2.4 V	256-CABGA (17x17)	18 Mbit	15 ns	Volatile
Renesas Electronics Corporation 70T653MS12BC	12 ns	256-LBGA	SRAM	Parallel	70 °C	0 °C	Surface Mount	SRAM - Dual Port Asynchronous	512K x 36	2.6 V	2.4 V	256-CABGA (17x17)	18 Mbit	12 ns	Volatile
Renesas Electronics Corporation 70T653MS10BC	10 ns	256-LBGA	SRAM	Parallel	70 °C	0 °C	Surface Mount	SRAM - Dual Port Asynchronous	512K x 36	2.6 V	2.4 V	256-CABGA (17x17)	18 Mbit	10 ns	Volatile
Renesas Electronics Corporation 70T653MS12BCGI	12 ns	256-LBGA	SRAM	Parallel	85 °C	-40 °C	Surface Mount	SRAM - Dual Port Asynchronous	512K x 36	2.6 V	2.4 V	256-CABGA (17x17)	18 Mbit	12 ns	Volatile

Catalog

512K x 36 Async, 3.3V/2.5V Dual-Port RAM, Interleaved I/Os

Description

The 70T653M is a high-speed 256K x 36 asynchronous dual-port static RAM designed to be used as a stand-alone 18874K-bit dual-port RAM. An automatic power-down feature controlled by the Chip Enables (either CE0 or CE1) permits the on-chip circuitry of each port to enter a very low standby power mode.