TK35A65W,S5X

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK35A65W,S5X

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	4100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs [Max]	80 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature	Mounting Type	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK35A65W,S5X	80 mOhm	50 W	10 V	N-Channel	150 °C	Through Hole	MOSFET (Metal Oxide)	30 V	3.5 V	TO-220SIS	35 A	650 V	TO-220-3 Full Pack	100 nC	4100 pF
Toshiba Semiconductor and Storage TK35A65W5,S5X	95 mOhm	50 W	10 V	N-Channel	150 °C	Through Hole	MOSFET (Metal Oxide)	30 V	4.5 V	TO-220SIS	35 A	650 V	TO-220-3 Full Pack		4100 pF	115 nC

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General part information

N-Channel 650 V 35A (Ta) 50W (Tc) Through Hole TO-220SIS

Technical documentation and resources