TK35A65 Series

Catalog

MOSFET N-CH 650V 35A TO220SIS

Part	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature	Mounting Type	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK35A65W,S5X	80 mOhm	50 W	10 V	N-Channel	150 °C	Through Hole	MOSFET (Metal Oxide)	30 V	3.5 V	TO-220SIS	35 A	650 V	TO-220-3 Full Pack	100 nC	4100 pF
Toshiba Semiconductor and Storage TK35A65W5,S5X	95 mOhm	50 W	10 V	N-Channel	150 °C	Through Hole	MOSFET (Metal Oxide)	30 V	4.5 V	TO-220SIS	35 A	650 V	TO-220-3 Full Pack		4100 pF	115 nC