RJH65T14DPQ-A0#T0
ActiveRenesas Electronics Corporation
IGBT 650V 50A TO-247A BUILT-IN FRD
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RJH65T14DPQ-A0#T0
ActiveRenesas Electronics Corporation
IGBT 650V 50A TO-247A BUILT-IN FRD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RJH65T14DPQ-A0#T0 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 A |
| Gate Charge | 80 nC |
| IGBT Type | Trench |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 250 W |
| Reverse Recovery Time (trr) | 250 ns |
| Supplier Device Package | TO-247A |
| Switching Energy | 1.2 mJ, 1.3 mJ |
| Td (on/off) @ 25°C | 125 ns, 38 ns |
| Test Condition [custom] | 400 V, 15 V |
| Test Condition [custom] | 10 Ohm |
| Test Condition [custom] | 50 A |
| Vce(on) (Max) @ Vge, Ic | 1.75 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.36 | |
| 25 | $ 2.67 | |||
| 100 | $ 2.29 | |||
| 500 | $ 2.23 | |||
Description
General part information
65T1x Series Series
The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.
Documents
Technical documentation and resources