65T1x Series Series

IGBT 650V 50A TO-247A Built-In FRD

Manufacturer: Renesas Electronics Corporation

Catalog

IGBT 650V 50A TO-247A Built-In FRD

Part	Td (on/off) @ 25°C	Supplier Device Package	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Switching Energy	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Package / Case	IGBT Type	Operating Temperature	Gate Charge	Voltage - Collector Emitter Breakdown (Max)
Renesas Electronics Corporation RJH65T14DPQ-A0#T0	38 ns 125 ns	TO-247A	250 ns	1.75 V	250 W	Through Hole	100 A	1.2 mJ 1.3 mJ	15 V 400 V	10 Ohm	50 A	TO-247-3	Trench	175 °C	80 nC	650 V

Catalog

IGBT 650V 50A TO-247A Built-In FRD

Description

The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.