AOD407

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 12A TO252

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 12A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD407

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1185 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	50 W, 2.5 W
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AOD407	4.5 V 10 V	2.5 W 50 W	20 V	3 V	P-Channel	MOSFET (Metal Oxide)	12 A	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	1185 pF	-55 °C	175 ░C	20 nC	60 V	115 mOhm	Surface Mount
Alpha & Omega Semiconductor Inc. AOD409_001	4.5 V 10 V		20 V	2.4 V	P-Channel	MOSFET (Metal Oxide)	26 A	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	3600 pF	-55 °C	175 ░C		60 V	40 mOhm	Surface Mount	54 nC

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