MOSFET P-CH 60V 12A TO252
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [x] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 4.5 V 10 V | 2.5 W 50 W | 20 V | 3 V | P-Channel | MOSFET (Metal Oxide) | 12 A | TO-252 (DPAK) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1185 pF | -55 °C | 175 ░C | 20 nC | 60 V | 115 mOhm | Surface Mount | |
Alpha & Omega Semiconductor Inc. | 4.5 V 10 V | 20 V | 2.4 V | P-Channel | MOSFET (Metal Oxide) | 26 A | TO-252 (DPAK) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3600 pF | -55 °C | 175 ░C | 60 V | 40 mOhm | Surface Mount | 54 nC |