IHD660IC2
ObsoletePower Integrations
IC GATE DRVR HALF-BRIDGE MODULE
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IHD660IC2
ObsoletePower Integrations
IC GATE DRVR HALF-BRIDGE MODULE
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IHD660IC2 |
|---|---|
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT |
| Input Type | Inverting |
| Mounting Type | Through Hole |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24 Leads |
| Package / Case | 36-DIP Module |
| Rise / Fall Time (Typ) [custom] | 100 ns |
| Rise / Fall Time (Typ) [custom] | 80 ns |
| Supplier Device Package | Module |
| Voltage - Supply [Max] | 16 V |
| Voltage - Supply [Min] | 14 V |
IHD660 Series
| Part | Number of Drivers | Gate Type | Package / Case | Package / Case | Input Type | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Channel Type | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Non-Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C | |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IHD660 Series
Half-Bridge Gate Driver IC Inverting Module
Documents
Technical documentation and resources