IC GATE DRVR HALF-BRIDGE MODULE
| Part | Number of Drivers | Gate Type | Package / Case | Package / Case | Input Type | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Channel Type | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Non-Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C | |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |
Power Integrations | 2 | IGBT N-Channel MOSFET | 24 Leads | 36-DIP Module | Inverting | Half-Bridge | 100 ns | 80 ns | Independent | Module | 16 V | 14 V | Through Hole | 85 °C | -40 °C |