2ED2304S06FXUMA1

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Infineon Technologies

THE 2ED2304S06F IS A 650 V SOI HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE IN A DSO-8 PACKAGE.

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2ED2304S06FXUMA1

Active

Infineon Technologies

THE 2ED2304S06F IS A 650 V SOI HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE IN A DSO-8 PACKAGE.

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Technical Specifications

Parameters and characteristics for this part

Specification	2ED2304S06FXUMA1

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	700 mA
Current - Peak Output (Source, Sink) [custom]	360 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	650 V
Input Type	CMOS
Logic Voltage - VIL, VIH [custom]	1.1 V
Logic Voltage - VIL, VIH [custom]	1.7 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	24 ns
Rise / Fall Time (Typ) [custom]	48 ns
Supplier Device Package	PG-DSO-8-910
Voltage - Supply [Max]	17.5 V
Voltage - Supply [Min]	10 VDC

2ED2304 Series

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Gate Type	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Number of Drivers	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]
Infineon Technologies 2ED2304S06FXUMA1	700 mA	360 mA	8-SOIC	3.9 mm	0.154 in	24 ns	48 ns	Half-Bridge	Synchronous	-40 °C	125 °C	PG-DSO-8-910	Surface Mount	650 V	IGBT N-Channel MOSFET	1.1 V	1.7 V	2	CMOS	17.5 V	10 VDC
Infineon Technologies 2ED2304S06FXLLA1	700 mA	360 mA	8-SOIC	3.9 mm	0.154 in	24 ns	48 ns	Half-Bridge	Synchronous	-40 °C	125 °C	PG-DSO-8-910	Surface Mount	650 V	IGBT N-Channel MOSFET	1.1 V	1.7 V	2	CMOS	17.5 V	10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.11
		10	$ 0.81
		50	$ 0.73
		100	$ 0.64
		200	$ 0.60
Digikey	Cut Tape (CT)	1	$ 1.25
		10	$ 1.12
		25	$ 1.06
		100	$ 0.87
		250	$ 0.81
		500	$ 0.72
		1000	$ 0.57
	Digi-Reel®	1	$ 1.25
		10	$ 1.12
		25	$ 1.06
		100	$ 0.87
		250	$ 0.81
		500	$ 0.72
		1000	$ 0.57
	Tape & Reel (TR)	2500	$ 0.56
		5000	$ 0.53
		7500	$ 0.51
		12500	$ 0.49
		17500	$ 0.48
Newark	Each (Supplied on Cut Tape)	1	$ 0.92
		10	$ 0.66
		25	$ 0.60
		50	$ 0.56
		100	$ 0.53
		250	$ 0.49
		500	$ 0.47
		1000	$ 0.46

Description

General part information

2ED2304 Series

EiceDRIVER™ 650 V Infineon SOIhalf-bridge gate driver ICwith integrated Bootstrap Diode forIGBTsandMOSFETswith 0.36 A source and 0.7 A sink currents in DSO-8 package. Using Infineon thin-film-SOI technology, 2ED2304S06F provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

Documents

Technical documentation and resources