THE 2ED2304S06F IS A 650 V SOI HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE IN A DSO-8 PACKAGE.
| Part | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case [y] | Package / Case [x] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Driven Configuration | Channel Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Mounting Type | High Side Voltage - Max (Bootstrap) [Max] | Gate Type | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Number of Drivers | Input Type | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 700 mA | 360 mA | 8-SOIC | 3.9 mm | 0.154 in | 24 ns | 48 ns | Half-Bridge | Synchronous | -40 °C | 125 °C | PG-DSO-8-910 | Surface Mount | 650 V | IGBT N-Channel MOSFET | 1.1 V | 1.7 V | 2 | CMOS | 17.5 V | 10 VDC |
Infineon Technologies | 700 mA | 360 mA | 8-SOIC | 3.9 mm | 0.154 in | 24 ns | 48 ns | Half-Bridge | Synchronous | -40 °C | 125 °C | PG-DSO-8-910 | Surface Mount | 650 V | IGBT N-Channel MOSFET | 1.1 V | 1.7 V | 2 | CMOS | 17.5 V | 10 VDC |