Technical Specifications
Parameters and characteristics for this part
| Specification | SFT1431-W |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 35 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 17.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 15 W, 1 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | IPAK/TP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SFT1431 Series
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.
Documents
Technical documentation and resources