SFT1431-TL-W

Obsolete

ON Semiconductor

MOSFET N-CH 35V 11A DPAK/TP-FA

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SFT1431-TL-W

Obsolete

ON Semiconductor

MOSFET N-CH 35V 11A DPAK/TP-FA

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SFT1431-TL-W

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	35 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.3 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	15 W, 1 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	DPACK/TP-FA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

SFT1431 Series

Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Mounting Type	Vgs (Max)
ON Semiconductor SFT1431-W	11 A	4 V	10 V	2.6 V	25 mOhm	1 W 15 W	MOSFET (Metal Oxide)	N-Channel	17.3 nC	IPAK/TP	IPAK TO-251-3 Short Leads TO-251AA	35 V	960 pF	150 °C	Through Hole	20 V
ON Semiconductor SFT1431-TL-W	11 A	4 V	10 V	2.6 V	25 mOhm	1 W 15 W	MOSFET (Metal Oxide)	N-Channel	17.3 nC	DPACK/TP-FA	DPAK (2 Leads + Tab) SC-63 TO-252-3	35 V	960 pF	150 °C	Surface Mount	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SFT1431 Series

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.

Documents

Technical documentation and resources