IS61WV25632BLL-10BLI

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ISSI, Integrated Silicon Solution Inc

8MB,HIGH-SPEED,ASYNC,256K X 32,8NS/3.3V,OR 10NS/2.4V-3.6V,90 BALL MBGA(8X13 MM), ROHS

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Active

ISSI, Integrated Silicon Solution Inc

8MB,HIGH-SPEED,ASYNC,256K X 32,8NS/3.3V,OR 10NS/2.4V-3.6V,90 BALL MBGA(8X13 MM), ROHS

Technical Specifications

Parameters and characteristics for this part

Part	Memory Format	Write Cycle Time - Word, Page	Technology	Access Time	Memory Organization [custom]	Memory Organization [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Memory Interface
ISSI, Integrated Silicon Solution Inc IS61WV25632BLL-10BLI-TR	SRAM	10 ns	SRAM - Asynchronous	10 ns	32	256 K	85 °C	-40 °C	90-TFBGA (8x13)	Surface Mount	1024 KB	Volatile	2.4 V	3.6 V	90-TFBGA	Parallel
ISSI, Integrated Silicon Solution Inc IS61WV25632BLL-10BLI	SRAM	10 ns	SRAM - Asynchronous	10 ns	32	256 K	85 °C	-40 °C	90-TFBGA (8x13)	Surface Mount	1024 KB	Volatile	2.4 V	3.6 V	90-TFBGA	Parallel
ISSI, Integrated Silicon Solution Inc IS61WV25632BLL-10BI	SRAM	10 ns	SRAM - Asynchronous	10 ns	32	256 K	85 °C	-40 °C	90-TFBGA (8x13)	Surface Mount	1024 KB	Volatile	2.4 V	3.6 V	90-TFBGA	Parallel

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General part information

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)

Technical documentation and resources

No documents available