8MB,HIGH-SPEED,ASYNC,256K X 32,8NS/3.3V,OR 10NS/2.4V-3.6V,90 BALL MBGA(8X13 MM), ROHS
| Part | Memory Format | Write Cycle Time - Word, Page | Technology | Access Time | Memory Organization [custom] | Memory Organization [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Memory Interface |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | SRAM | 10 ns | SRAM - Asynchronous | 10 ns | 32 | 256 K | 85 °C | -40 °C | 90-TFBGA (8x13) | Surface Mount | 1024 KB | Volatile | 2.4 V | 3.6 V | 90-TFBGA | Parallel |
ISSI, Integrated Silicon Solution Inc | SRAM | 10 ns | SRAM - Asynchronous | 10 ns | 32 | 256 K | 85 °C | -40 °C | 90-TFBGA (8x13) | Surface Mount | 1024 KB | Volatile | 2.4 V | 3.6 V | 90-TFBGA | Parallel |
ISSI, Integrated Silicon Solution Inc | SRAM | 10 ns | SRAM - Asynchronous | 10 ns | 32 | 256 K | 85 °C | -40 °C | 90-TFBGA (8x13) | Surface Mount | 1024 KB | Volatile | 2.4 V | 3.6 V | 90-TFBGA | Parallel |