2SA1162-GR,LF

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Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

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Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1162-GR,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	S-Mini
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Operating Temperature	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage 2SA1162-GR,LF	S-Mini	125 ¯C	150 mW	SC-59 SOT-23-3 TO-236-3	200 hFE	PNP	50 V	150 mA	Surface Mount	100 nA
Toshiba Semiconductor and Storage 2SA1162S-Y, LF(D	S-Mini	125 ¯C	150 mW	SC-59 SOT-23-3 TO-236-3		PNP	50 V	150 mA	Surface Mount	100 nA	120
Toshiba Semiconductor and Storage 2SA1162S-Y,LF	S-Mini	125 ¯C	150 mW	SC-59 SOT-23-3 TO-236-3		PNP	50 V	150 mA	Surface Mount	100 nA	70 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

Technical documentation and resources