2SA1162S-Y, LF(D

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1162S-Y, LF(D

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	S-Mini
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Operating Temperature	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage 2SA1162-GR,LF	S-Mini	125 ¯C	150 mW	SC-59 SOT-23-3 TO-236-3	200 hFE	PNP	50 V	150 mA	Surface Mount	100 nA
Toshiba Semiconductor and Storage 2SA1162S-Y, LF(D	S-Mini	125 ¯C	150 mW	SC-59 SOT-23-3 TO-236-3		PNP	50 V	150 mA	Surface Mount	100 nA	120
Toshiba Semiconductor and Storage 2SA1162S-Y,LF	S-Mini	125 ¯C	150 mW	SC-59 SOT-23-3 TO-236-3		PNP	50 V	150 mA	Surface Mount	100 nA	70 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

Technical documentation and resources