HS1JFL

Active

Taiwan Semiconductor Corporation

75NS, 1A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

75NS, 1A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HS1JFL

Capacitance @ Vr, F	6 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123F
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123F
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F
Taiwan Semiconductor Corporation HS1JFL	1 A	SOD-123F	75 ns	1.7 V	Standard	5 µA	Surface Mount	150 °C	-55 °C	SOD-123F	200 mA 500 ns	600 V	6 pF
Taiwan Semiconductor Corporation HS1JL RVG	1 A	DO-219AB	75 ns	1.7 V	Standard	5 µA	Surface Mount	150 °C	-55 °C	Sub SMA	200 mA 500 ns	600 V	15 pF
Taiwan Semiconductor Corporation HS1J R3G	1 A	DO-214AC SMA	75 ns	1.7 V	Standard	5 µA	Surface Mount	150 °C	-55 °C	DO-214AC (SMA)	200 mA 500 ns	600 V	20 pF
Taiwan Semiconductor Corporation HS1JFS	1 A	SOD-128	75 ns	1.7 V	Standard	1 µA	Surface Mount	150 °C	-55 °C	SOD-128	200 mA 500 ns	600 V	13 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Surface Mount SOD-123F

Technical documentation and resources