HS1JL RVG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SUB SMA

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SUB SMA

Technical Specifications

Parameters and characteristics for this part

Specification	HS1JL RVG

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	Sub SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F
Taiwan Semiconductor Corporation HS1JFL	1 A	SOD-123F	75 ns	1.7 V	Standard	5 µA	Surface Mount	150 °C	-55 °C	SOD-123F	200 mA 500 ns	600 V	6 pF
Taiwan Semiconductor Corporation HS1JL RVG	1 A	DO-219AB	75 ns	1.7 V	Standard	5 µA	Surface Mount	150 °C	-55 °C	Sub SMA	200 mA 500 ns	600 V	15 pF
Taiwan Semiconductor Corporation HS1J R3G	1 A	DO-214AC SMA	75 ns	1.7 V	Standard	5 µA	Surface Mount	150 °C	-55 °C	DO-214AC (SMA)	200 mA 500 ns	600 V	20 pF
Taiwan Semiconductor Corporation HS1JFS	1 A	SOD-128	75 ns	1.7 V	Standard	1 µA	Surface Mount	150 °C	-55 °C	SOD-128	200 mA 500 ns	600 V	13 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Surface Mount Sub SMA

Technical documentation and resources