GD30MPS06H
ActiveGeneSiC Semiconductor
DIODE SIL CARB 650V 49A TO247-2
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GD30MPS06H
ActiveGeneSiC Semiconductor
DIODE SIL CARB 650V 49A TO247-2
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GD30MPS06H |
|---|---|
| Capacitance @ Vr, F | 735 pF |
| Current - Average Rectified (Io) | 49 A |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-2 |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.91 | |
| 10 | $ 5.28 | |||
| 25 | $ 5.05 | |||
| 100 | $ 4.72 | |||
| 250 | $ 4.51 | |||
| 500 | $ 4.36 | |||
| 1000 | $ 4.21 | |||
Description
General part information
GD30MPS06 Series
Diode 650 V 49A Through Hole TO-247-2
Documents
Technical documentation and resources