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DIODE SIL CARB 650V 49A TO247-2
| Part | Technology | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Supplier Device Package | Mounting Type | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | SiC (Silicon Carbide) Schottky | TO-247-2 | 650 V | No Recovery Time | 175 ░C | -55 C | 735 pF | TO-247-2 | Through Hole | 49 A |