TK8S06K3L(T6L1,NQ)

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 8A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 8A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK8S06K3L(T6L1,NQ)

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK8S06K3L(T6L1,NQ)	MOSFET (Metal Oxide)	Surface Mount	8 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	25 W	3 V	400 pF	54 mOhm	6 V 10 V	60 V	DPAK+	175 °C	10 nC

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General part information

N-Channel 60 V 8A (Ta) 25W (Tc) Surface Mount DPAK+

Technical documentation and resources