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MOSFET N-CH 60V 8A DPAK
| Part | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | FET Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | Surface Mount | 8 A | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 25 W | 3 V | 400 pF | 54 mOhm | 6 V 10 V | 60 V | DPAK+ | 175 °C | 10 nC |