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MT53E512M64D2HJ-046 AUT:B TR - MT53E1G64D4HJ-046 WT:C

MT53E512M64D2HJ-046 AUT:B TR

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Micron Technology Inc.

IC DRAM 32GBIT PAR 556WFBGA

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MT53E512M64D2HJ-046 AUT:B TR - MT53E1G64D4HJ-046 WT:C

MT53E512M64D2HJ-046 AUT:B TR

Active
Micron Technology Inc.

IC DRAM 32GBIT PAR 556WFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMT53E512M64D2HJ-046 AUT:B TR
Clock Frequency2.133 GHz
GradeAutomotive
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization512 M
Memory Size32 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
QualificationAEC-Q100
Supplier Device Package12.4x12.4, 556-WFBGA
TechnologySDRAM - Mobile LPDDR4X
Voltage - Supply [Max]1.17 V
Voltage - Supply [Min]1.06 V
Write Cycle Time - Word, Page18 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 35.79

Description

General part information

MT53E512 Series

SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 556-WFBGA (12.4x12.4)

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