MT53E512 Series

Catalog

IC DRAM 16GBIT 200TFBGA

Part	Package / Case	Technology	Memory Format	Mounting Type	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Memory Organization	Clock Frequency	Memory Type	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Write Cycle Time - Word, Page	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Qualification	Voltage - Supply
Micron Technology Inc. MT53E512M32D2FW-046 WT:D TR	200-TFBGA	SDRAM - Mobile LPDDR4	DRAM	Surface Mount	14.5	10	200-TFBGA	512 M
Micron Technology Inc. MT53E512M64D2HJ-046 AUT:B TR		SDRAM - Mobile LPDDR4X	DRAM	Surface Mount			12.4x12.4 556-WFBGA	512 M	2.133 GHz	Volatile	Automotive	125 °C	-40 °C	Parallel	18 ns	1.06 V	1.17 V	32 Gbit	AEC-Q100
Micron Technology Inc. MT53E512M32D1ZW-046 AAT:B	200-TFBGA	SDRAM - Mobile LPDDR4X	DRAM	Surface Mount	14.5	10	200-TFBGA	512 M	2.133 GHz	Volatile	Automotive	105 °C	-40 °C	Parallel	18 ns	1.06 V	1.17 V		AEC-Q100
Micron Technology Inc. MT53E512M32D2NP-053 RS WT:H TR	200-WFBGA	SDRAM - Mobile LPDDR4	DRAM	Surface Mount			200-WFBGA (10x14.5)	512 M
Micron Technology Inc. MT53E512M32D1ZW-046 AIT:B TR	200-TFBGA	SDRAM - Mobile LPDDR4X	DRAM	Surface Mount	14.5	10	200-TFBGA	512 M	2.133 GHz	Volatile	Automotive	95 °C	-40 °C	Parallel	18 ns	1.06 V	1.17 V		AEC-Q100
Micron Technology Inc. MT53E512M64D4NK-046 WT:D	366-WFBGA	SDRAM - Mobile LPDDR4	DRAM	Surface Mount			366-WFBGA (15x15)	512 M	2.133 GHz	Volatile		85 °C	-30 °C					32 Gbit		1.1 V
Micron Technology Inc. MT53E512M64D2HJ-046 WT:B		SDRAM - Mobile LPDDR4	DRAM	Surface Mount			12.4x12.4 556-WFBGA	512 M	2.133 GHz	Volatile		85 °C	-25 °C	Parallel	18 ns	1.06 V	1.17 V	32 Gbit
Micron Technology Inc. MT53E512M32D1ZW-046 IT:B TR	200-TFBGA	SDRAM - Mobile LPDDR4	DRAM	Surface Mount	14.5	10	200-TFBGA	512 M	2.133 GHz	Volatile		95 °C	-40 °C	Parallel	18 ns	1.06 V	1.17 V
Micron Technology Inc. MT53E512M32D1ZW-046 AAT:B TR	200-TFBGA	SDRAM - Mobile LPDDR4X	DRAM	Surface Mount	14.5	10	200-TFBGA	512 M	2.133 GHz	Volatile	Automotive	105 °C	-40 °C	Parallel	18 ns	1.06 V	1.17 V		AEC-Q100
Micron Technology Inc. MT53E512M32D4NQ-053 RS WT:F		SDRAM - Mobile LPDDR4	DRAM					512 M