TK4P50D(T6RSS-Q)

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Toshiba Semiconductor and Storage

MOSFET N-CH 500V 4A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 500V 4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK4P50D(T6RSS-Q)

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Operating Temperature
Toshiba Semiconductor and Storage TK4P50D(T6RSS-Q)	MOSFET (Metal Oxide)	10 V	380 pF	4 A	Surface Mount	500 V	80 W	4.4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	2 Ohm	9 nC	30 V	N-Channel	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 4A (Ta) 80W (Tc) Surface Mount DPAK

Technical documentation and resources