MOSFET N-CH 500V 4A DPAK
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 10 V | 380 pF | 4 A | Surface Mount | 500 V | 80 W | 4.4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | 2 Ohm | 9 nC | 30 V | N-Channel | 150 °C |