ZXMD63P03XTA
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
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ZXMD63P03XTA
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMD63P03XTA |
|---|---|
| Configuration | 2 P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-MSOP, 8-TSSOP |
| Package / Case | 3 mm |
| Package / Case [custom] | 0.118 in |
| Power - Max [Max] | 1.04 W |
| Supplier Device Package | 8-MSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
ZXMD63N03X (Not Recommended for New Design (NRND)) Series
NRND = Not Recommended for New Design
| Part | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | FET Feature | Package / Case | Package / Case [custom] | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2 N-Channel (Dual) | 700 pF | 1.04 W | 6 nC | -55 °C | 150 °C | 8-MSOP | MOSFET (Metal Oxide) | 20 V | 3 V | 130 mOhm | Surface Mount | Logic Level Gate | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | |||
Diodes Inc | 2 N-Channel (Dual) | 290 pF | 1.04 W | -55 °C | 150 °C | 8-MSOP | MOSFET (Metal Oxide) | 30 V | 1 V | Surface Mount | Logic Level Gate | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | 8 nC | 135 mOhm | 2.3 A | ||
Diodes Inc | 2 P-Channel | 290 pF | 1.04 W | -55 °C | 150 °C | 8-MSOP | MOSFET (Metal Oxide) | 20 V | 700 mV | 270 mOhm | Surface Mount | Logic Level Gate | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | ||||
Diodes Inc | 2 N-Channel (Dual) | 700 pF | 1.04 W | 6 nC | -55 °C | 150 °C | 8-MSOP | MOSFET (Metal Oxide) | 20 V | 3 V | 130 mOhm | Surface Mount | Logic Level Gate | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | |||
Diodes Inc | 2 P-Channel | 270 pF | 1.04 W | 7 nC | -55 °C | 150 °C | 8-MSOP | MOSFET (Metal Oxide) | 30 V | 1 V | Surface Mount | Logic Level Gate | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | ||||
Diodes Inc | 2 P-Channel | 270 pF | 1.04 W | 7 nC | -55 °C | 150 °C | 8-MSOP | MOSFET (Metal Oxide) | 30 V | 1 V | Surface Mount | Logic Level Gate | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | ||||
Diodes Inc | 2 P-Channel | 290 pF | 1.04 W | -55 °C | 150 °C | 8-MSOP | MOSFET (Metal Oxide) | 20 V | 700 mV | 270 mOhm | Surface Mount | Logic Level Gate | 8-MSOP 8-TSSOP | 0.118 in | 3 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ZXMD63N03X (Not Recommended for New Design (NRND)) Series
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Documents
Technical documentation and resources