ZXMD63N03X (Not Recommended for New Design (NRND)) Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	FET Feature	Package / Case	Package / Case [custom]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Diodes Inc ZXMD63N02XTA	2 N-Channel (Dual)	700 pF	1.04 W	6 nC	-55 °C	150 °C	8-MSOP	MOSFET (Metal Oxide)	20 V	3 V	130 mOhm	Surface Mount	Logic Level Gate	8-MSOP 8-TSSOP	0.118 in	3 mm
Diodes Inc ZXMD63N03XTA	2 N-Channel (Dual)	290 pF	1.04 W		-55 °C	150 °C	8-MSOP	MOSFET (Metal Oxide)	30 V	1 V		Surface Mount	Logic Level Gate	8-MSOP 8-TSSOP	0.118 in	3 mm	8 nC	135 mOhm	2.3 A
Diodes Inc ZXMD63P02XTC	2 P-Channel	290 pF	1.04 W		-55 °C	150 °C	8-MSOP	MOSFET (Metal Oxide)	20 V	700 mV	270 mOhm	Surface Mount	Logic Level Gate	8-MSOP 8-TSSOP	0.118 in	3 mm
Diodes Inc ZXMD63N02XTC	2 N-Channel (Dual)	700 pF	1.04 W	6 nC	-55 °C	150 °C	8-MSOP	MOSFET (Metal Oxide)	20 V	3 V	130 mOhm	Surface Mount	Logic Level Gate	8-MSOP 8-TSSOP	0.118 in	3 mm
Diodes Inc ZXMD63P03XTA	2 P-Channel	270 pF	1.04 W	7 nC	-55 °C	150 °C	8-MSOP	MOSFET (Metal Oxide)	30 V	1 V		Surface Mount	Logic Level Gate	8-MSOP 8-TSSOP	0.118 in	3 mm
Diodes Inc ZXMD63P03XTC	2 P-Channel	270 pF	1.04 W	7 nC	-55 °C	150 °C	8-MSOP	MOSFET (Metal Oxide)	30 V	1 V		Surface Mount	Logic Level Gate	8-MSOP 8-TSSOP	0.118 in	3 mm
Diodes Inc ZXMD63P02XTA	2 P-Channel	290 pF	1.04 W		-55 °C	150 °C	8-MSOP	MOSFET (Metal Oxide)	20 V	700 mV	270 mOhm	Surface Mount	Logic Level Gate	8-MSOP 8-TSSOP	0.118 in	3 mm

Catalog

NRND = Not Recommended for New Design

Description

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.