RJH65T04BDPM-A0#T2

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Renesas Electronics Corporation

IGBT 650V 30A TO-3PFP BUILT-IN FRD

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RJH65T04BDPM-A0#T2

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Renesas Electronics Corporation

IGBT 650V 30A TO-3PFP BUILT-IN FRD

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RJH65T04BDPM-A0#T2

Current - Collector (Ic) (Max) [Max]	60 A
Gate Charge	74 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-94
Power - Max [Max]	65 W
Reverse Recovery Time (trr)	80 ns
Supplier Device Package	TO-3PFP
Td (on/off) @ 25°C [custom]	35 ns
Td (on/off) @ 25°C [custom]	125 ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	1.95 V
Voltage - Collector Emitter Breakdown (Max)	650 V

65T0x Series Series

IGBT 650V 30A TO-3PFP Built-In FRD

Part	Operating Temperature	Test Condition	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
Renesas Electronics Corporation RJH65T04BDPM-A0#T2	175 °C	10 Ohm 15 V 30 A 400 V	65 W	1.95 V	74 nC	650 V	Trench	Through Hole	TO-3PFP	80 ns	SC-94	60 A	35 ns	125 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	450	$ 2.94

Description

General part information

65T0x Series Series

The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.

Documents

Technical documentation and resources