65T0x Series Series

IGBT 650V 30A TO-3PFP Built-In FRD

Manufacturer: Renesas Electronics Corporation

Catalog

IGBT 650V 30A TO-3PFP Built-In FRD

Part	Operating Temperature	Test Condition	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
Renesas Electronics Corporation RJH65T04BDPM-A0#T2	175 °C	10 Ohm 15 V 30 A 400 V	65 W	1.95 V	74 nC	650 V	Trench	Through Hole	TO-3PFP	80 ns	SC-94	60 A	35 ns	125 ns

Catalog

IGBT 650V 30A TO-3PFP Built-In FRD

Description

The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.