31DF4

Active

Taiwan Semiconductor Corporation

35NS, 3A, 400V, SUPER FAST RECOVERY RECTIFIER

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

35NS, 3A, 400V, SUPER FAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	31DF4

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation 31DF4	DO-201AD Axial	400 V	200 mA 500 ns	1.7 V	Standard	150 °C	-40 °C	35 ns	DO-201AD	3 A	Through Hole	20 µA
Taiwan Semiconductor Corporation 31DF4 B0G	DO-201AD Axial	400 V	200 mA 500 ns	1.7 V	Standard	150 °C	-40 °C	35 ns	DO-201AD	3 A	Through Hole	20 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 3A Through Hole DO-201AD

Technical documentation and resources