31DF4 B0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	31DF4 B0G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation 31DF4	DO-201AD Axial	400 V	200 mA 500 ns	1.7 V	Standard	150 °C	-40 °C	35 ns	DO-201AD	3 A	Through Hole	20 µA
Taiwan Semiconductor Corporation 31DF4 B0G	DO-201AD Axial	400 V	200 mA 500 ns	1.7 V	Standard	150 °C	-40 °C	35 ns	DO-201AD	3 A	Through Hole	20 µA

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Distributor	Package	Quantity	$

General part information

Diode 400 V 3A Through Hole DO-201AD

Technical documentation and resources

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