TJ20S04M3L(T6L1,NQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 20A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 20A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ20S04M3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	41 W
Rds On (Max) @ Id, Vgs	22.2 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ	40 V	P-Channel	-20 V	10 V	22.2 mOhm	MOSFET (Metal Oxide)	175 °C	DPAK+	Surface Mount	1850 pF	41 W	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	20 A
Toshiba Semiconductor and Storage TJ20S04M3L,LXHQ	40 V	P-Channel	-20 V	10 V	22.2 mOhm	MOSFET (Metal Oxide)	175 °C	DPAK+	Surface Mount	1850 pF	41 W	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	20 A

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General part information

P-Channel 40 V 20A (Ta) 41W (Tc) Surface Mount DPAK+

Technical documentation and resources