TJ20S04 Series

Catalog

MOSFET P-CH 40V 20A DPAK

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ	40 V	P-Channel	-20 V	10 V	22.2 mOhm	MOSFET (Metal Oxide)	175 °C	DPAK+	Surface Mount	1850 pF	41 W	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	20 A
Toshiba Semiconductor and Storage TJ20S04M3L,LXHQ	40 V	P-Channel	-20 V	10 V	22.2 mOhm	MOSFET (Metal Oxide)	175 °C	DPAK+	Surface Mount	1850 pF	41 W	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	20 A