2SC6026MFVGR,L3F

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Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A VESM

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Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A VESM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC6026MFVGR,L3F

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power - Max [Max]	150 mW
Supplier Device Package	VESM
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature	Power - Max [Max]	Mounting Type	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce
Toshiba Semiconductor and Storage 2SC6026CT-GR,L3F	50 V	100 nA	CST3	150 °C	100 mW	Surface Mount	60 MHz	NPN	250 mV	100 mA	SC-101 SOT-883	200 hFE
Toshiba Semiconductor and Storage 2SC6026MFVGR,L3F	50 V	100 nA	VESM	150 °C	150 mW	Surface Mount	60 MHz	NPN	250 mV	150 mA	SOT-723	200 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 60MHz 150 mW Surface Mount VESM

Technical documentation and resources