SH8K25GZ0TB1

NRND

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 5.2A I(D), 40V, 0.085OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

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NRND

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 5.2A I(D), 40V, 0.085OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	SH8K25GZ0TB1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.7 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature
Rohm Semiconductor SH8K25GZ0TB1	8-SOP	85 mOhm	1.7 nC	1.4 W	MOSFET (Metal Oxide)	5.2 A	2.5 V	100 pF	Surface Mount	2 N-Channel (Dual)	40 V	8-SOIC	3.9 mm	0.154 in	150 °C
Rohm Semiconductor SH8K25GZ0TB	8-SOP	85 mOhm	1.7 nC	2 W	MOSFET (Metal Oxide)	5.2 A	2.5 V	100 pF	Surface Mount	2 N-Channel (Dual)	40 V	8-SOIC	3.9 mm	0.154 in	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 5.2A (Ta) 1.4W (Ta) Surface Mount 8-SOP

Technical documentation and resources