Beta
⌘K
POWER FIELD-EFFECT TRANSISTOR, 5.2A I(D), 40V, 0.085OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Configuration | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 8-SOP | 85 mOhm | 1.7 nC | 1.4 W | MOSFET (Metal Oxide) | 5.2 A | 2.5 V | 100 pF | Surface Mount | 2 N-Channel (Dual) | 40 V | 8-SOIC | 3.9 mm | 0.154 in | 150 °C |
Rohm Semiconductor | 8-SOP | 85 mOhm | 1.7 nC | 2 W | MOSFET (Metal Oxide) | 5.2 A | 2.5 V | 100 pF | Surface Mount | 2 N-Channel (Dual) | 40 V | 8-SOIC | 3.9 mm | 0.154 in | 150 °C |