G2R120MT33J

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GeneSiC Semiconductor

POWER FIELD-EFFECT TRANSISTOR,

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GeneSiC Semiconductor

POWER FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	G2R120MT33J

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	3300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	145 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3706 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Rds On (Max) @ Id, Vgs	156 mOhm
Supplier Device Package	TO-263-7
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Mounting Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
GeneSiC Semiconductor G2R120MT33J	3300 V	156 mOhm	145 nC	3706 pF	N-Channel	Surface Mount	-10 V	25 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	35 A	-55 °C	175 ░C	TO-263-7

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 108.03

General part information

N-Channel 3300 V 35A Surface Mount TO-263-7

Technical documentation and resources