POWER FIELD-EFFECT TRANSISTOR,
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Mounting Type | Vgs (Max) [Min] | Vgs (Max) [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 3300 V | 156 mOhm | 145 nC | 3706 pF | N-Channel | Surface Mount | -10 V | 25 V | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 35 A | -55 °C | 175 ░C | TO-263-7 |