2N6387G

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ON Semiconductor

TRANS DARLINGTON NPN 60V 10A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

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Active

ON Semiconductor

TRANS DARLINGTON NPN 60V 10A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	2N6387G

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220
Vce Saturation (Max) @ Ib, Ic	3 V
Vce Saturation (Max) @ Ib, Ic [custom]	10 A
Vce Saturation (Max) @ Ib, Ic [custom]	100 mA
Voltage - Collector Emitter Breakdown (Max)	60 V

10 A, 80 V NPN Darlington Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor 2N6388	1000 hFE	TO-220	2 W	80 V	10 A	100 mA	3 V	1 mA	TO-220-3	Through Hole	150 °C	-65 °C
ON Semiconductor 2N6387G	1000 hFE	TO-220	2 W		10 A	100 mA	3 V	1 mA	TO-220-3	Through Hole	150 °C	-65 °C	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

Technical documentation and resources