2N6388 Series

10 A, 80 V NPN Darlington Bipolar Power Transistor

Catalog

10 A, 80 V NPN Darlington Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor 2N6388	1000 hFE	TO-220	2 W	80 V	10 A	100 mA	3 V	1 mA	TO-220-3	Through Hole	150 °C	-65 °C
ON Semiconductor 2N6387G	1000 hFE	TO-220	2 W		10 A	100 mA	3 V	1 mA	TO-220-3	Through Hole	150 °C	-65 °C	60 V

10 A, 80 V NPN Darlington Bipolar Power Transistor

• High DC Current Gain -hFE=2500 (Typ) @Ic=4.0 Adc

• Collector-Emitter Sustaining Voltage - @ 100 mAdcVceo(sus) = 60 Vdc (Min) - 2N6387Vceo (sus) = 80 Vdc (Min) - 2N6388

• Low Collector-Emitter Saturation Voltage-Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• T0-220AB Compact Package

• Epoxy meets UL94, VO @ 1/8 inch

• ESD Ratings Machine Model C and Human Body Model 3B

• Pb-Free Packages are Available

The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.