AOD4S60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO252

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD4S60

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	263 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	56.8 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.1 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Supplier Device Package	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOD4S60	MOSFET (Metal Oxide)	-55 °C	150 °C	600 V	263 pF	56.8 W	30 V	Surface Mount	TO-252 (DPAK)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	6 nC	900 mOhm	4.1 V	4 A	10 V

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